锑化镓 相关信息由 特博万德科技有限公司提供。如需了解更详细的 锑化镓 的信息，请点击 https://www.qiyeku.com/b2b/topvendor.html 查看 特博万德科技有限公司 的详细联系方式。
单晶
掺杂
导电 类型
载流子浓度cm-3
位错密 度cm-2
生长方法 {zd0}尺寸
标准 基片
GaSb
None None high R Zn Te Te high R
P P- P+ N N
1~2×1017 1~5×1016 1~5×1018 2~6×1017 1~5×1016
＜103
LEC Φ3″
Φ3″×0.5 Φ2″×0.5
Typical Electrical Properties
Dopant available
Te
Zn
Undoped
Type of conductivity
N
P
Concentration ( cm -3 )
1E17 - 5E18
2E17 - 4E18
x
Hall Mobility ( cm 2 / v.s. )
2500 - 3500
200 - 500
600 - 700
Standard Specifications
Growth method
LEC
Diameter ( mm )
50.8
Thickness ( um )
500 +/-25 um
Conductivity
Semi-conducting
Orientation
<100> , <111> , <110>
Off orientation
From 2° to 10° off
Flat options
EJ or US SEMI. Std .
Surface finish
One side or two sides polished
EPD ( cm-2)
< 1000 or < 10000
Grade
Epi polished grade , mechanical grade
Package method
Single wafer container with outer foil bag
